FLASH RECTIFIERS. 1F14 Datasheet

1F14 RECTIFIERS. Datasheet pdf. Equivalent

Part 1F14
Description PHOTO FLASH RECTIFIERS
Feature BL GALAXY ELECTRICAL PHOTO FLASH RECTIFIERS 1F10 --- 1F20 VOLTAGE RANGE: 1000 --- 2000 V CURRENT: 0.
Manufacture GALAXY ELECTRICAL
Datasheet
Download 1F14 Datasheet

MCC Features   omponents 21201 Itasca Stree 1F14 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1F10 THRU 1F1 1F14 Datasheet
BL GALAXY ELECTRICAL PHOTO FLASH RECTIFIERS 1F10 --- 1F20 V 1F14 Datasheet
1F10 THRU 1F18 PHOTOFLASH FAST RECOVERY RECTIFIER REVERSE 1F14 Datasheet
Recommendation Recommendation Datasheet 1F14 Datasheet




1F14
BL GALAXY ELECTRICAL
PHOTO FLASH RECTIFIERS
1F10 --- 1F20
VOLTAGE RANGE: 1000 --- 2000 V
CURRENT: 0.5 A
FEATURES
Fast switching
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case: JEDEC R--1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces, 0.20 grams
Mounting position: Any
R-1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
1F10 1F12 1F14 1F15 1F16 1F18 1F20 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
IFSM
superimposed on rated load TJ=125
Maximum instantaneous forw ard voltage
@ 0.5 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (NOTE1)
trr
Typical junction capacitance
(NOTE2)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Rev erse recov ery test conditions:IF=0.5A,IR=-1.0A,IRR=-0.25A.
2. Mersured at 1MHZ and applied rev erse v oltage of 4.0V.
1000
700
1000
1200
840
1200
1400
980
1400
1500 1600
1050 1120
1500 1600
0.5
25.0
1.8
5.0
100.0
300
15
-55 ---- + 125
-55 ---- + 150
1800 2000
1260 1400
1800 2000
V
V
V
A
A
V
μA
ns
pF
www.galaxycn.com
Document Number 1582101
BLGALAXY ELECTRICAL
1.



1F14
RATINGS AND CHARACTERISTIC CURVES
1F10 --- 1F20
FIG.1 -- FORWARD DERATING CURVE
0.5
0.4
0.3
0.2 Single Phase
Half Wave 60H Z
Resistive or
0.1 Inductive Load
0
25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE,
FIG.2 -- PEAK FORWARD SURGE CURRENT
30
TJ=125
8.3ms Single Half
20 Sine - Wave
10
0
1 10
100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
+ 0 .5 A
trr
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0 .2 5 A
NOTES:1.RISETIME= 7ns MAX.INPUTIMPEDANCE=1M . 22pF.
Ggggggggg 2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50 .
-1 .0 A
1cm
SETTIMEBASEFOR50/100 ns/cm
Document Number 1582101
BLGALAXY ELECTRICAL
www.galaxycn.com
2.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)