Power MOSFET. OSG65R900DF Datasheet

OSG65R900DF MOSFET. Datasheet pdf. Equivalent


Oriental Semiconductor OSG65R900DF
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF
Enhancement Mode N-Channel Power MOSFET
General Description
OSG65R900xF use advanced GreenMOSTM
technology to provide low RDS(ON), low gate
charge, fast switching and excellent avalanche
characteristics. This device is suitable for active
power factor correction and switching mode
power supply applications.
VDS, min@Tjmax
ID, pulse
RDS(ON), max @ VGS=10 V
Qg
700 V
15 A
900 mΩ
7.6 nC
Schematic and Package Information
Schematic Diagram
Pin Assignment Top View
TO251
TO252
TO220F
TO220
OSG65R900AF OSG65R900DF OSG65R900FF OSG65R900PF
Absolute Maximum Ratings at Tj=25unless otherwise noted
Parameter
Drain source voltage
Gate source voltage
Continuous drain current1), TC=25
Continuous drain current1), TC=100
Pulsed drain current2), TC=25
Power dissipation3) for TO251, TO252, TO220 , TC=25
Power dissipation3) for TO220F , TC=25
Single pulsed avalanche energy5)
MOSFET dv/dt ruggedness, VDS=0480 V
Reverse diode dv/dt, VDS=0480 V, ISDID
Operation and storage temperature
Symbol
VDS
VGS
ID
ID, pulse
PD
EAS
dv/dt
dv/dt
TstgTj
Value
650
±30
5
3.2
15
37
26
130
50
15
-55 to 150
Unit
V
V
A
A
W
mJ
V/ns
V/ns
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OSG65R900DF Datasheet
Recommendation OSG65R900DF Datasheet
Part OSG65R900DF
Description Enhancement Mode N-Channel Power MOSFET
Feature OSG65R900DF; , OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  Gene.
Manufacture Oriental Semiconductor
Datasheet
Download OSG65R900DF Datasheet




Oriental Semiconductor OSG65R900DF
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF
Enhancement Mode N-Channel Power MOSFET
Thermal Characteristics
Parameter
Thermal resistance, junction-case
Thermal resistance, junction-ambient4)
Value
Symbol
TO251/TO252/TO220 TO220F
RθJC 3.4 4.8
RθJA
62 62.5
Unit
°C/W
°C/W
Electrical Characteristics at Tj=25 unless otherwise specified
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-state resistance
Gate-source leakage current
Drain-source leakage current
Symbol
BVDSS
VGS(th)
RDS(ON)
IGSS
IDSS
Min.
650
700
2.0
Typ.
770
0.72
2.1
Max.
4.0
0.90
100
-100
1
Unit
Test condition
VGS=0 V, ID=250 μA
V VGS=0 V, ID=250 μA
Tj=150
V VDS=VGS, ID=250 μA
VGS=10 V, ID=3 A
Ω VGS=10 V, ID=3 A,
Tj=150
VGS=30 V
nA
VGS=-30 V
μA VDS=650 V, VGS=0 V
Dynamic Characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
Typ.
343
29
1.5
15
11
23
22
Max.
Unit
Test condition
pF VGS=0 V,
pF VDS=50 V,
pF ƒ=1 MHz
ns
VGS=10 V,
ns VDS=380 V,
ns RG=25 Ω,
ns ID=5 A
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Oriental Semiconductor OSG65R900DF
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF
Enhancement Mode N-Channel Power MOSFET
Gate Charge Characteristics
Parameter
Total gate charge
Gate-source charge
Gate-drain charge
Gate plateau voltage
Symbol
Qg
Qgs
Qgd
Vplateau
Min.
Typ.
7.6
1.9
3.3
5.8
Max.
Unit
Test condition
nC
nC ID=5 A,
VDS=400 V,
nC VGS=10 V
V
Body Diode Characteristics
Parameter
Diode forward current
Pulsed source current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
IS
ISP
VSD
trr
Qrr
Irrm
Min.
Typ.
157
1.03
11.5
Max.
5
15
1.3
Unit
Test condition
A VGS<Vth
V IS=5 A, VGS=0 V
ns
VR=300 V, IS=5 A,
μC
di/dt=100 A/μs
A
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 °C.
5) VDD=50 V, RG=25 Ω, L=20 mH, starting Tj=25 °C.
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