pHEMT FET. CFH800 Datasheet

CFH800 FET. Datasheet pdf. Equivalent

CFH800 Datasheet
Recommendation CFH800 Datasheet
Part CFH800
Description High-Linearity Packaged pHEMT FET
Feature CFH800; CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description The CFH800 is a .
Manufacture TriQuint
Datasheet
Download CFH800 Datasheet




TriQuint CFH800
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Product Description
The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept
point and low noise figure. The device is suitable for front-end applications up to
4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN
front-ends. The device achieves a noise figure as low as 0.50 dB with 17 dB
associated gain at 1.8 GHz. It is packaged in a low-cost miniature SC70 package.
Features
Low Noise figure and high associated gain
for high IP3 receiver stages up to 4 GHz
NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA
f = 1.8 GHz
Low cost miniature package SC70
LG = 0.4µm; WG = 800µm
Applications
PCS CDMA and UMTS Receivers
WLAN Multicarrier Receivers
Basestations
Package Style
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
For additional information and latest specifications, see our website: www.triquint.com
Revision C, April 29, 2004
1



TriQuint CFH800
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
ID Drain Current
TCH Channel Temperature
TSG Storage Temperature
PTOT Total Power Dissipation (TS </= 80.7°C)1
Thermal Resistance
Notes:
RthChS
Channel-soldering point source
1) TS: Temperature measured on the source lead at the soldering point to the PCB.
Absolute Maximum Value
5.5
6.5
-2.0
160
+150
-65 to +150
350
Units
V
V
V
mA
°C
°C
mW
198 K/W
Electrical Specifications
Symbol
Parameter
Conditions
Min.
IDSS Drain-Source Saturation VDS = 3V; VGS = 0V
Current
0
VGS Pinch-off Voltage VDS = 3V; ID = 1 mA
IG
Gate Leakage Current
VDS = 3V; ID = 30 mA
-0.7
-
gm
Transconductance
VDS = 3V; ID = 30 mA
F Noise Figure*
VDS = 3V; ID = 10 mA; f = 1.8 GHz
ID = 30 mA
Ga Associated Gain VDS = 3V; ID = 10 mA; f = 1.8 GHz
ID = 30 mA
140
-
-
-
-
IIP3 Input 3rd Order Intercept VDS = 3V; ID = 10 mA; f = 1.8 GHz
Point ID = 30 mA
-
-
Note*: Parameters are measured at input impedance for minimum noise figure and output impedance for maximum gain.
Typ/Nom
80
-0.25
-
200
0.56
0.50
15.0
17.0
8.5
13.0
Max.
140
0
10
-
-
-
-
-
-
-
Units
mA
V
µA
mS
dB
dB
dB
dB
dBm
dBm
For additional information and latest specifications, see our website: www.triquint.com
Revision C, April 29, 2004
2



TriQuint CFH800
CFH800
Data Sheet
Low-Noise, High-Linearity Packaged pHEMT FET
Electrical Characteristics, Continued:
Typical Common Source S – Parameters @ 3V; 10mA; Zo = 50Ohm
f[GHz]
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S11 Mag
0.9764
0.9537
0.9280
0.9046
0.8779
0.8487
0.8207
0.7944
0.7733
0.7556
0.7388
0.7224
0.7090
0.6970
0.6873
0.6826
0.6780
0.6747
0.6705
0.6687
0.6648
0.6633
0.6636
0.6618
0.6626
0.6634
0.6637
0.6615
0.6560
0.6490
0.6724
S11 Ang
-21.1
-31.4
-41.2
-51.5
-60.6
-69.4
-77.9
-85.9
-93.8
-100.9
-107.4
-114.3
-120.5
-126.7
-132.1
-137.2
-142.3
-147.1
-151.5
-155.9
-159.7
-163.7
-167.2
-170.7
174.7
163.3
154.1
146.3
138.9
132.0
123.6
S21 Mag
11.3599
11.0508
10.6821
10.3053
9.8595
9.4127
8.9213
8.4443
8.0254
7.6169
7.2086
6.8570
6.4833
6.1680
5.8699
5.5980
5.3439
5.0877
4.8517
4.6457
4.4596
4.2397
4.0655
3.9065
3.2259
2.7350
2.3874
2.1249
1.9437
1.7984
1.6937
S21 Ang
164.4
156.9
149.7
142.8
136.4
130.5
124.8
119.6
114.6
110.0
105.6
101.6
97.6
93.8
90.1
86.8
83.6
80.5
77.3
74.5
71.7
69.3
66.3
63.9
52.6
42.6
34.0
25.7
17.1
8.7
-1.6
S12 Mag
0.0306
0.0408
0.0511
0.0621
0.0718
0.0787
0.0864
0.0898
0.0970
0.1001
0.1036
0.1064
0.1077
0.1110
0.1132
0.1143
0.1136
0.1171
0.1170
0.1180
0.1176
0.1201
0.1196
0.1186
0.1194
0.1182
0.1211
0.1247
0.1292
0.1370
0.1484
S12 Ang
78.0
74.4
67.6
57.4
53.5
50.7
47.8
43.3
38.5
36.1
32.6
30.4
27.7
26.3
23.8
21.7
20.0
18.4
16.7
14.7
13.6
12.8
11.3
9.7
6.0
2.8
1.6
-2.0
-1.9
-3.3
-8.7
S22 Mag
0.6388
0.6249
0.6048
0.5803
0.5548
0.5303
0.5059
0.4807
0.4553
0.4367
0.4144
0.3931
0.3776
0.3610
0.3465
0.3331
0.3235
0.3152
0.3091
0.3055
0.3038
0.3041
0.3059
0.3115
0.3471
0.3849
0.4140
0.4191
0.4021
0.3640
0.3577
S22 Ang
-18.8
-28.1
-37.0
-45.5
-53.7
-61.2
-68.8
-75.6
-82.4
-88.6
-95.2
-100.9
-107.0
-113.2
-118.7
-125.0
-131.2
-137.1
-143.0
-148.8
-154.4
-159.8
-165.1
-170.0
172.3
163.0
159.0
156.0
151.9
143.3
126.4
Typical Common Source Noise – Parameters @ 3V; 10mA; Zo = 50Ohm
f[GHz] Fmin [dB] Ga [dB] Mag opt ) Phase(Γopt) [deg] Rn/50
0.9 0.41 18.7
1.8 0.56 15.6
2.4 0.61 13.5
3.0 0.69 11.4
0.33
0.37
0.37
0.38
23 0.14
98 0.10
136 0.10
170 0.06
For additional information and latest specifications, see our website: www.triquint.com
Revision C, April 29, 2004
3







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