HBT Amplifier. AP603 Datasheet

AP603 Amplifier. Datasheet pdf. Equivalent

AP603 Datasheet
Recommendation AP603 Datasheet
Part AP603
Description High Dynamic Range 7W 28V HBT Amplifier
Feature AP603; AP603 High Dynamic Range 7W 28V HBT Amplifier Applications  Mobile Infrastructure  High Power Amp.
Manufacture TriQuint
Datasheet
Download AP603 Datasheet




TriQuint AP603
AP603
High Dynamic Range 7W 28V HBT Amplifier
Applications
Mobile Infrastructure
High Power Amplifier (HPA)
Product Features
800 – 2200 MHz
+38 dBm P1dB
-50 dBc ACLR @ 1W PAVG
-51 dBc IMD3 @ 1W PEP
15% Efficiency @ 1W PAVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz,
5.5W CW Pout
Lead-free/RoHS-compliant
General Description
The AP603 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2200 MHz applications with up to +38 dBm of
compressed 1dB power.
The AP603 uses a high reliability, high voltage InGaP/GaAs
HBT process technology. The device incorporates
proprietary bias circuitry to compensate for variations in
linearity and current draw over temperature. The module
does not require any negative bias voltage; an internal active
bias allows the AP603 to operate directly off a commonly
used high voltage supply (typically +24 to +32V). An added
feature allows the quiescent bias to be adjusted externally to
meet specific system requirements.
The AP603 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G / 4G mobile infrastructure.
5x6 mm power DFN package
Functional Block Diagram
Pin Configuration
Pin #
1
2, 3, 7, 8, 12, 13
4, 5, 6
9, 10, 11
14
Backside paddle
Symbol
PIN_Vbias
N/C
RF IN
RF Output / Vcc
PIN_Vpd
RF/DC GND
Ordering Information
Part No.
AP603-F
Description
28V HBT Amp
AP603-PCB900 869-960 MHz Evaluation board
AP603-PCB1960 1930-1990 MHz Evaluation board
AP603-PCB2140 2110-2170 MHz Evaluation board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev A 07/02/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 20 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®



TriQuint AP603
AP603
High Dynamic Range 7W 28V HBT Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Rating
-55 to 150oC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
320 mA
9.5 W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Vcc
Icq
TJ (for >106 hours MTTF)
Operational Temperature
Min
-40
Typ
+28
165
+25
Max
192
+85
Units
V
mA
oC
oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test Conditions:VCC = +28 V, VPD = 5 V, ICQ = 165 mA, T = 25C using a tuned application circuit.
Parameter
Conditions
Min
Typical
Operational Bandwidth
800
Test Frequency
2140
Power Gain
11.9
Input Return Loss
15
Output Return Loss
9.5
ACLR @ 28 dBm Output Power
See Note 1.
-50.6
IMD3 @ +30 dBm PEP
See Note 2.
-50
PIN_Vpd Current, Ipd
4
Operating Current, Icc @ 30 dBm Output Power See Note 1.
232
Collector Efficiency @ 30 dBm Output Power See Note 1.
14.5
Output P1dB
+37.6
Quiescent Current, Icq
165
Vpd +5
Vcc +28
Thermal Resistance (jnc to case) θjc
Max
2200
8.7
Units
MHz
MHz
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
oC/W
Notes:
1. Using W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
2. IMD3 is measured with 1 MHz tone spacing.
3. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25C. Biasing for the
amplifier is suggested at Vcc = +28V, Vpd = +5V and Icq = 165 mA to achieve the best tradeoff in terms of efficiency and linearity.
Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly.
Data Sheet: Rev A 07/02/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 20 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®



TriQuint AP603
AP603
High Dynamic Range 7W 28V HBT Amplifier
Device Characterization Data
S-Parameters (VCC = +28 V, Vpd = 5 V, ICQ = 165 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
 
40
35
Gain / Maximum Stable Gain
DB(|S(2,1)|) DB(GMax())
S11
Swp Max
3.00001GHz
S22
Swp Max
3.00001GHz
30 3.0 3.0
25 4.0 4.0
5.0 5.0
20
15 10.0
10.0
10
5
0 -0.2
-0.2
-5
-10
0 0.5 1 1.5 2 2.5
Frequency (GHz)
-0.4
Swp Min
3e-005GHz
-0.4
Swp Min
3e-005GHz
Note:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is
expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The
impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameter Data
Vcc = +28 V, Vpd = 5V, Icq = 165 mA, T = 25 °C, unmatched 50 Ohm system, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle)
50
-2.63
-169.40
25.54
146.01
-40.50
55.97
100
-1.78
-170.62
23.33
132.51
-38.11
39.21
200
-0.92
-173.99
19.08
109.79
-36.04
21.60
400
-0.64
-177.96
13.40
93.01
-35.59
9.15
600
-0.53
-178.87
9.88
85.15
-35.72
3.39
800
-0.52
-178.84
7.52
79.52
-35.90
6.93
1000
-0.46
-177.79
5.42
74.40
-35.68
5.88
1200
-0.44
-177.25
4.01
69.71
-35.62
3.23
1400
-0.38
-176.83
2.93
64.99
-35.48
1.79
1600
-0.39
-177.55
2.22
59.81
-35.13
-0.56
1800
-0.48
-179.87
1.77
52.82
-34.75
-4.12
2000
-0.59
175.92
1.54
44.04
-34.21
-10.23
2200
-0.73
170.02
1.41
33.03
-33.63
-18.12
2400
-0.97
163.30
1.23
19.79
-33.13
-29.67
2600
-1.21
157.14
0.75
3.56 -32.89
-43.94
2800
-1.28
153.30
0.03
-14.33
-33.04
-61.10
3000
-1.18
152.21
-0.89
-34.56
-33.44
-81.90
S22 (dB)
-1.32
-3.07
-5.00
-6.06
-5.82
-5.38
-4.77
-4.16
-3.62
-3.12
-2.63
-2.19
-1.74
-1.28
-0.90
-0.57
-0.45
S22 (ang)
-45.78
-67.75
-104.04
-129.02
-136.33
-138.25
-139.20
-139.65
-139.95
-140.63
-142.14
-144.85
-149.24
-155.12
-162.55
-170.87
-178.70
Data Sheet: Rev A 07/02/11
© 2011 TriQuint Semiconductor, Inc.
- 3 of 20 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®







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