Bridge Rectifier. GBJ2008 Datasheet

GBJ2008 Rectifier. Datasheet pdf. Equivalent

GBJ2008 Datasheet
Recommendation GBJ2008 Datasheet
Part GBJ2008
Description Single-Phase 20.0A Glass Passivated Bridge Rectifier
Feature GBJ2008; GBJ20005 THRU GBJ2010 Technical Data Data Sheet N1795, Rev. - GBJ20005-GBJ2010 Green Products Si.
Manufacture Sangdest Microelectronics
Datasheet
Download GBJ2008 Datasheet




Sangdest Microelectronics GBJ2008
GBJ20005
THRU
GBJ2010
Technical Data
Data Sheet N1795, Rev. A
GBJ20005-GBJ2010
Single-Phase 20.0A Glass Passivated Bridge Rectifier
GBJ
Features
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Plastic material-UL flammability 94V-0
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Circuit Diagram
Mechanical Data
Case: GBJ, Molded plastic
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
Polarity: as marked on case
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version
Maximum Ratings @TA=25°C unless otherwise specified
Type Number
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward rectified output current
@TA =100°C
Peak Forward Surge Current,8.3ms single half-
sine-wave superimposed on rated load
(JEDEC method)
VRRM
VRWM
VDC
VRMS
I(AV)
IFSM
GBJ
20005
GBJ
2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
GBJ
2010
Units
50
51
100 200
2
400
4
600
6
800
8
1000
1V
35
3
70
7
140
1
280
2
420
4
560
5
700
1V
20.0 A
240 A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com



Sangdest Microelectronics GBJ2008
Technical Data
Data Sheet N1795, Rev. A
GBJ20005
THRU
GBJ2010
Electrical Characteristics@TA=25°C unless otherwise specified
Type Number
Forward Voltage (per element) @IF =10A
@IF =20A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
Typical Junction Capacitance(per leg)
(Note 1)
* Pulse width < 300 µs, duty cycle < 2%
Symbol
VF
IRM
CJ
GBJ
20005
GBJ
2001
GBJ GBJ
2002 2004
1.0
1.1
10.0
500
GBJ
2006
GBJ
2008
GBJ
2010
Units
V
µA
65 pF
Thermal-Mechanical Specifications:
Type Number
Symbol
Between Junction and Ambient, Without heatsink
Between Junction and Case, Without heatsink
Operating and Storage Temperature Range
RθJA
RθJc
TJ, TSTG
GBJ
20005
GBJ
2001
GBJ GBJ
2002 2004
22
1.5
GBJ
2006
-55 to +150
GBJ
2008
GBJ
2010
Units
°C/W
°C
Note: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Ratings and Characteristics Curves
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com



Sangdest Microelectronics GBJ2008
Technical Data
Data Sheet N1795, Rev. A
GBJ20005
THRU
GBJ2010
Ordering Information
Device
GBJ20005
THRU
GBJ2010
Package
GBJ(Pb-Free)
Plating
Pure Sn
Shipping
15pcs / tube
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Marking Diagram
Where XXXXX is YYWWL
SSG
YY
WW
L
GBJ20005
= SSG
= Year
= Week
= Lot Number
= Type Number
CautionsMolding resin
Epoxy resin UL:94V-0
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)