Efficient Rectifier. US1K Datasheet

US1K Rectifier. Datasheet pdf. Equivalent

US1K Datasheet
Recommendation US1K Datasheet
Part US1K
Description High Efficient Rectifier
Feature US1K; US1A THRU US1M  RoHS COMPLIANT   High Efficient Rectifier Features ● High efficiency ● High curr.
Manufacture Yangzhou Yangjie
Datasheet
Download US1K Datasheet




Yangzhou Yangjie US1K
US1A THRU US1M 
RoHS
COMPLIANT
 
High Efficient Rectifier
Features
High efficiency
High current capability
High Reliability
High surge current capability
Solder dip 260 °C max. 10 s, per JESD 22-B106
 
Mechanical Data
Package: SMA-W
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:Color band denotes cathode end
Maximum Ratings (Ta=25Unless otherwise specified
PARAMETER
SYMBOL UNIT US1A
US1B 
US1D 
US1G 
US1J 
US1K 
Device marking code
US1A
US1B 
US1D 
US1G 
US1J 
US1K 
Repetitive Peak Reverse Voltage
VRRM
V
50
100 200 400 600 800
Average Forward Current @60Hz sine wave,
Resistance load, Ta=50
Surge(Non-repetitive)Forward Current @60Hz
Half-sine wave, 1 cycle, Ta=25
IO
IFSM
A
A
1.0
30
Storage Temperature
Tstg
-55 ~+150
Junction Temperature
Tj
-55~+125
US1M 
US1M 
1000
Electrical CharacteristicsTa=25Unless otherwise specified
PARAMETER
SYMBOL UNIT
TEST
CONDITIONS
US1A
US1B  US1D 
Maximum instantaneous forward voltage
drop per diode
VFM
V IFM=1.0A
1.0
Maximum DC reverse current at
rated DC blocking voltage per diode
Reverse Recovery time
Typical junction capacitance
IRRM1
IRRM2
trr
Cj
Ta=25
μA Ta=100
ns
IF=0.5A IR=1A
IRR=0.25A
Measured at
1MHZ and
pF Applied Reverse
Voltage of 4.0
V.D.C.
50
20
US1G 
1.3
2.5
150
US1J 
US1K 
1.7
75
15
US1M
Thermal Characteristics Ta=25Unless otherwise specified
PARAMETER
SYMBOL UNIT
US1A
US1B 
US1D 
Thermal Resistance(Typical)
RθJ-A
/W
US1G 
55
US1J 
US1K 
US1M 
S-A205
Rev. 2.0, 28-Apr-14
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com



Yangzhou Yangjie US1K
US1A THRU US1M 
 
Ordering Information (Example)
PREFERED P/N
PACKAGE CODE UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
US1A ~ US1M
F1
Approximate 0.067
5000
10000
OUTER CARTON
QUANTITY(pcs)
80000
DELIVERY MODE
Reel
Characteristics (Typical)
FIG.1: Io-Ta Curve
1.0
FIG.2: Surge Forward Currrent Capability
30
0.8 24
8.3ms Single Half Sine Wave
JEDEC Method
0.6 18
0.4
S ingle Phase
Half Wave 60HZ
0.2 Resistive or
Inductive Load
0.375''(9.5mm)
Lead Length
0
0
50
100
100
Ambient Temperature (℃)
150
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.02
0.01
0.6
FIG.3: Forward Voltage
US1A-US1D
US1G
US1J-US1M
TJ=25
Pulse width=300us
1% Duty Cycle
0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
2.0
12
6
0
1
2 4 6 8 10
20 40 60 80 100
Number of Cycles
FIG.4: Typical Reverse Characteristics
100
10 Tj=125
1.0
0.1
0.01
Tj=100
Tj=25
0.001
0
20 40 60
80
Percent of Rated Peak Reverse Voltage (%)
100
S-A205
Rev. 2.0, 28-Apr-14
2/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com



Yangzhou Yangjie US1K
US1A THRU US1M 
 
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+) DUT
(-)
(-)
PULSE
GENERATOR
(NOTE2)
1Ω
NONINDUCTIV
OSCILLOSCOPE
(NOTE1)
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1MΩ 22pf
2.Rise Time=10ns max.Sourse Impedance=50Ω
+0.5A
0
-0.25A
trr
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
Outline Dimensions
SMA-W
Mounting Pad Layout
1.96
2.04
1.66
5.58
Dimensions in millimeters
SMA-W
Dim Min Max
A 4.00 4.60
B 2.40 2.65
C 4.80 5.31
D 2.05 2.45
E 0.80 1.50
F 0.10 0.20
G 1.15 1.80
S-A205
Rev. 2.0, 28-Apr-14
3/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com







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