DatasheetsPDF.com

VOLTAGE SUPPRESSOR. BZW04-23 Datasheet







BZW04-23 SUPPRESSOR. Datasheet pdf. Equivalent




Part

BZW04-23

Description

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Manufacture

MDE Semiconductor

Datasheet
Download BZW04-23 Datasheet


MDE Semiconductor BZW04-23


MDE Semiconductor BZW04-23

y Flammability Classification 94 V-O • Glass passivated chip junction in DO-4 1 package • 400W surge capability at 1ms • Excellent clamping capability Low zener impedance • Low incremen tal surge resistance • Excellent clam ping capability • Fast response time: typically less than 1.0 ps from 0 volt s to BV min • Typical IR less than 1 A above 10V • High temperature sol dering guaranteed: 300°C/10 seconds/ .3 75", (9.5mm) lead length, 5lbs., (2.3kg ) tension MECHANICAL DATA Case: JEDEC DO-41 Molded plastic Terminals: Axial leads, solderable per MIL-STD-750, Meth od 2026 Polarity: Color band denoted po si .



Part

BZW04-23

Description

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

Manufacture

MDE Semiconductor

Datasheet
Download BZW04-23 Datasheet




 BZW04-23
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
BZW04 SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-6.8 TO 376 Volts
400 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated chip junction in DO-41 package
• 400W surge capability at 1ms
• Excellent clamping capability
• Low zener impedance
• Low incremental surge resistance
• Excellent clamping capability
• Fast response time: typically less than
1.0 ps from 0 volts to BV min
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed:
300°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic
Terminals: Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.012 ounces, 0.3 grams
Dimensions in inches (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types BZW-04-5V8 thru types BZW04-376 (e.g. BZW04-5V8B, BZW04-376B)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For Capacitive load, derate current by 20%
RATING
SYMBOL
VALUE
UNITS
Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms
(NOTE 1)
Peak Pulse Current of on 10/1000 µs waveform (Note 1)
PPPM
Ippm
Minimum 400
SEE TABLE 1
Watts
Amps
Steady State Power Dissipation at TL = 75°C
lengths .375", 9.5mm (Note 2)
Lead
PM(AV)
1.0 Watts
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load, (JEDEC Method)(Note 3)
IFSM 40 Amps
Operatings and Storage Temperature Range
NOTES:
TJ, TSTG
-55 +175
°C
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
11/13/2013





 BZW04-23
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATINGS AND CHARACTERISTIC CURVES BZW04 SERIES
Ratings and
Characteristic Curves(TA=25unless otherwise noted)
Fig. 1 - Peak Pulse Power
100
Non-repetitive Pulse
Waveform shown in
Fig. 3
10
Fig.2 - Pulse Derating Curve
1
0.1
0.1μ
150
100
50
1.0μ
10μs
100μs
td - Pulse Width
1.0m
10m
Fig.3 - Pulse Waveform
tr = 10μsec.
Peak Value IPPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
Half Value-
peak current decays to
IPPM
50% of IPPM
10/1000μsec.Waveform
as defined by R.E.A.
td
0 0 1.0 2.03.0 3 4.0 4.0
t - Time(ms)
Fig.5 - steady State Power Derating
1.00
L=0.375" (9.5mm)
0.88 Lead Lengths
60 HZ Resistive or
Inductive Load
0.75
0.63
0.50
0.38
1.6x1.6x.040"
0.25 (40x40x1mm)
Copper Heat Sinks
0.13
0.000
0 0.2 0.4 0.6 0.8 1 1.2
TL - Lead Temperature
Fig.7 - Typical Reverse Leakage Characteristics
100
10 Measured at Devices
Stand-off Voltage,VWM
TA = 25°C
1
0.1
0.01
0
0.2 0.4 0.6 0.8
1
V(BR) - Breakdown Voltage (V)
1.2
0
0
TA - Ambient Temperature (°C)
Fig.4 - Typ.Junction Capacitance Uni-Directional
10000
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
1000 Measured at Zero
Bias
100
1000 10
Measured at
Stand-Off
Voltage, VWM
1.0 100 200
VWM - Reverse Stand-Off Voltage (V)
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
TJ = TJ max.
8.3ms Single Half Sine-Wave
100 (JEDEC Method)
50
10
0
100
0.2 0.4 0.6 0.8 1 1.2
Number of Cycles at 60 Hz
Fig. 8 - Typ.Transient Thermal Impedance
10
1
0 0.2 0.4 0.6 0.8 1 1.2
tp-Pulse Duration (sec)
11/13/2013



Recommended third-party BZW04-23 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)