1N60P, 1N60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to 1N60P and 1N60S
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range
1.9 max
3.9 max
R5 max
4.5± 1.0
10.0± 1.0
1.0 max
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