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Recovery Rectifiers. RS1MF Datasheet

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Recovery Rectifiers. RS1MF Datasheet






RS1MF Rectifiers. Datasheet pdf. Equivalent




RS1MF Rectifiers. Datasheet pdf. Equivalent





Part

RS1MF

Description

Surface Mount Fast Recovery Rectifiers



Feature


Jingdao Microelectronics Surface Mount Fast Recovery Rectifiers Reverse Voltag e - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applic ations • Low profile package • Glas s Passivated Chip Junction • Easy to pick and place • Fast reverse recover y time • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL D ATA • Case: SMAF • Terminals: .
Manufacture

Jingdao Microelectronics

Datasheet
Download RS1MF Datasheet


Jingdao Microelectronics RS1MF

RS1MF; Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 27mg / 0.00095oz R S1AF THRU RS1MF PINNING PIN DESCRIPTION 1 Cathode 2 Anode 12 Top View Marking Code: RS1A-RS1M Simplified outline SM AF and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise sp ecified. Single phase, half wave, 60 Hz , resistive or inductiv.


Jingdao Microelectronics RS1MF

e load. For capacitive load, derate curr ent by 20%. Parameter Symbols RS1AF R S1BF RS1DF RS1GF RS1JF RS1KF RS1MF Unit s Maximum Repetitive Peak Reverse Volt age VRRM 50 100 200 400 600 800 1000 V Maximum .


Jingdao Microelectronics RS1MF

.

Part

RS1MF

Description

Surface Mount Fast Recovery Rectifiers



Feature


Jingdao Microelectronics Surface Mount Fast Recovery Rectifiers Reverse Voltag e - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applic ations • Low profile package • Glas s Passivated Chip Junction • Easy to pick and place • Fast reverse recover y time • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL D ATA • Case: SMAF • Terminals: .
Manufacture

Jingdao Microelectronics

Datasheet
Download RS1MF Datasheet




 RS1MF
山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Fast Recovery Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Fast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 27mg / 0.00095oz
RS1AF THRU RS1MF
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking CodeRS1A-RS1M
Simplified outline SMAF and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols RS1AF RS1BF RS1DF RS1GF RS1JF RS1KF RS1MF Units
Maximum Repetitive Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
at Tc = 125 °C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I F ( AV )
IFSM
50 100 200 400 600 800 1000 V
1A
30 A
Maximum Forward Voltage at 1 A
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =125 °C
Typical Junction Capacitance
at VR=4V, f=1MHz
Maximum Reverse Recovery Time 1
Typical Thermal Resistance2
VF
IR
Cj
trr
RθJA
1.3 V
5 μA
50
15 pF
150 250 500 ns
80 °C/W
Operating and Storage Temperature Range
Tj, Tstg
1Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A.
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
-55 ~ +150
°C
2016.01
SMAF-F-RS1AF~RS1MF-1A1KV
Page 1 of 3




 RS1MF
山东晶导微电子有限公司
Jingdao Microelectronics
Fig.1 Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
10
TJ=25°C
1.0
0.1
0.01
0.0
pulse with 300μs
1% duty cycle
0.5 1.0 1.5 2.0 2.5
Instaneous Forward Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10
Number of Cycles
100
RS1AF THRU RS1MF
Fig.2 Typical Reverse Characteristics
100
TJ=125°C
10
1.0
TJ=25°C
0.1
00 20 40 60 80 100 120 140
percent of Rated Peak Reverse Voltage (%)
Fig.4 Typical Junction Capacitance
100
TJ=25°C
10
1
0.1 1.0 10
Reverse Voltage (V)
100
2016.01
www.sdjingdao.com
Page 2 of 3




 RS1MF
山东晶导微电子有限公司
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
ALL ROUND
RS1AF THRU RS1MF
ALL ROUND
SMAF
HE V M A E
DA
g
g
Top View
Bottom View
UNIT
ACDE
max 1.2 0.20 3.7
mm
min 0.9 0.12 3.3
2.7
2.4
max
mil
min
47
35
7.9 146 106
4.7 130 94
e
1.6
1.3
63
51
g HE
1.2 4.9
0.8 4.4
47 193
31 173
7°
The recommended mounting pad size
1.6
(63)
2.2
(86)
1.6
(63)
Unit mm
(mil)
Marking
Type number
RS1AF
RS1BF
RS1DF
RS1GF
RS1JF
RS1KF
RS1MF
Marking code
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
2016.01
JD512254B6
Page 3 of 3



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