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BS616UV1610

Part Number	BS616UV1610
Manufacturer	Brilliance Semiconductor
Description	Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 DESCRIPTION The BS616UV1610 is a high perfor...
Datasheet	BS616UV1610 PDF File

Overview

BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.
8V to 2.
3V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.
2uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers.
The BS616UV1610 has an automatic power down feature, reducing the p...

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