Barrier Diode. YHF03 Datasheet

YHF03 Datasheet PDF, Equivalent


Part Number

YHF03

Description

Schottky Barrier Diode

Manufacture

PHENITEC

Total Page 1 Pages
PDF Download
Download YHF03 Datasheet PDF


YHF03 Datasheet
PHENITEC
SEMICONDUCTOR
30mA 40V Low VF(0.30mm)
YHF03
Schottky Barrier Diode
Chip Information
MAXIMUM RATINGS
Parameter
Symbol
Chip Size
0.30 x 0.30mm
Pad Size
0.13 x 0.13mm
Chip Quantity
122959 pcs/wafer
Scribe Line Width
60um
Passivation
PSG
Wafer Size
5 inch
Top Metallization
Al(For Wire)
Chip Thickness/Back Metal : See below "Ordering Information"
Limit
Unit
Note
Repetitive Peak Reverse Voltage
VRRM
40
Non-Repetitive Peak Reverse Voltage
VRSM
Maximum DC Blocking Voltage
VR 40
Average Forward Rectified Current
IF(AV)
30
Peak Forward Surge Current
IFSM
Storage and Operating Temperature Range Tj,TSTG
ELECTRICAL CHARACTERISTICS
0.2
-65 to +125
Parameter
Symbol Spec Limit Probe Spec
Maximum Forward Voltage
VF1 0.370 0.360
VF2
VF3
VF4
VF5
Maximum DC Reverse Current IR1
0.5
0.35
IR2
IR3
IR4
V
V
V
mA
A 8.3ms Single Half Sine-Wave
degC
Typical Unit
Test Condition
0.310
0.13
V IF=1mA
V
V
V
V
uA VR=30V
uA
uA
uA
Ta=25degC
Ta=25degC
Reverse Breakdown Voltage
Junction Capacitance
Reverse Recovery Time
BV
Cj
trr
42
45 57 V IR=10uA
2 pF V=1V,f=1MHz
1 nS IF=IR=10mA irr=0.1IR
Ordering Information
Chip Type Chip Thickness
YHF035
YHF037
YHF039
180 +/- 20um
150 +/- 20um
100 +/- 15um
Back Metal
Au(For Eutectic)
Au(For Eutectic)
Au(For Eutectic)
Note:
Designed For RB751S-40,RB715F
SHEET NO F06018A
REV. 1


Features Datasheet pdf PHENITEC SEMICONDUCTOR 30mA 40V Low VF(0 .30mm) YHF03 Schottky Barrier Diode C hip Information MAXIMUM RATINGS Parame ter Symbol Chip Size 0.30 x 0.30mm Pad Size 0.13 x 0.13mm Chip Quantity 122959 pcs/wafer Scribe Line Width 6 0um Passivation PSG Wafer Size 5 in ch Top Metallization Al(For Wire) Ch ip Thickness/Back Metal : See below "Or dering Information" Limit Unit Note Repetitive Peak Reverse Voltage VRRM 40 Non-Repetitive Peak Reverse Voltag e VRSM Maximum DC Blocking Voltage V R 40 Average Forward Rectified Current IF(AV) 30 Peak Forward Surge Curren t IFSM Storage and Operating Temperat ure Range Tj,TSTG ELECTRICAL CHARACTERI STICS 0.2 -65 to +125 Parameter Symb ol Spec Limit Probe Spec Maximum Forwa rd Voltage VF1 0.370 0.360 VF2 VF3 VF4 VF5 Maximum DC Reverse Current IR 1 0.5 0.35 IR2 IR3 IR4 V V V mA A 8.3ms Single Half Sine-Wave degC Typi cal Unit Test Condition 0.310 0.13 V IF=1mA V V V V uA VR=30V uA uA uA Ta=25degC Ta=25degC Revers.
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