FNK01N17
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK01N17 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =100V,ID =170A RDS(ON) <5.0mΩ @ VGS=10V
(Typ:4.1mΩ)
● High density cell design for ultra low Rdson ● Fully char...
