Power MOSFET. IRFTS9342PbF Datasheet

IRFTS9342PbF MOSFET. Datasheet pdf. Equivalent

Part IRFTS9342PbF
Description Power MOSFET
Feature VDS VGS max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) -30 V ±20 V .
Manufacture International Rectifier
Datasheet
Download IRFTS9342PbF Datasheet

VDS VGS max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4 IRFTS9342PbF Datasheet
Recommendation Recommendation Datasheet IRFTS9342PbF Datasheet





IRFTS9342PbF
VDS
VGS max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg typ
ID
(@TA= 25°C)
-30 V
±20 V
40 mΩ
66 mΩ
12 nC
-5.8 A
Applications
l Battery operated DC motor inverter MOSFET
l System/Load Switch
PD - 96411A
IRFTS9342PbF
HEXFET® Power MOSFET
D1
6
A
D
D2
5D
G3
4S
Top View
TSOP-6
Features and Benefits
Features
Benefits
Industry-Standard TSOP-6 Package
results in Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
Orderable part number
IRFTS9342TRPbF
Package Type
TSOP-6
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Max.
-30
±20
-5.8
-4.6
-46
2.0
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through „ are on page 2
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1
02/29/12



IRFTS9342PbF
IRFTS9342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-30
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
VGS(th)
ΔVGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
-1.3
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
6.8
Qg Total Gate Charge
–––
Qgs
Gate-to-Source Charge
–––
Qgd Gate-to-Drain Charge
–––
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
Typ.
–––
19
32
53
–––
-5.5
–––
–––
–––
–––
–––
12
1.8
3.1
17
4.6
13
45
28
595
133
85
Max. Units
Conditions
––– V VGS = 0V, ID = -250μA
––– mV/°C Reference to 25°C, ID = -1mA
e40
e66
mΩ
VGS = -10V, ID = -5.8A
VGS = -4.5V, ID = -4.6A
-2.4
–––
V
mV/°C
VDS
=
VGS,
ID
=
-25μA
-1.0
-150
-100
100
–––
–––
–––
–––
μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
nA
VGS = -20V
VGS = 20V
S VDS = -10V, ID = -4.6A
VDS = -15V
nC VGS = -10V
ID = -4.6A
––– Ω
––– VDD = -15V, VGS = -10V
–––
–––
ns
ID = -4.6A
RG = 6.8Ω
–––
––– VGS = 0V
––– pF VDS = -25V
––– ƒ = 1.0KHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.0
––– ––– -46
––– ––– -1.2
MOSFET symbol
A
showing the
integral reverse
G
ep-n junction diode.
V TJ = 25°C, IS = -4.6A, VGS = 0V
––– 20 30 ns TJ = 25°C, IF = -4.6A, VDD = -24V
––– 11 17 nC di/dt = 100A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
Parameter
eRθJA Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400μs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board.
2
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