NPN TRANSISTOR. KTC3113 Datasheet

KTC3113 TRANSISTOR. Datasheet pdf. Equivalent

Part KTC3113
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE High DC Cur.
Manufacture KEC
Datasheet
Download KTC3113 Datasheet

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SW KTC3113 Datasheet
Recommendation Recommendation Datasheet KTC3113 Datasheet





KTC3113
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
High DC Current Gain : hFE=600 3600.
Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
50
50
5
150
30
400
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3113
EPITAXIAL PLANAR NPN TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE(Note)
VCE(sat)
fT
Cob
VCB=50V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
Noise Figure
NF(1)
NF(2)
VCE=6V, IC=0.1mA, f=100Hz, Rg=10k
VCE=6V, IC=0.1mA, f=1kHz, Rg=10k
Note: hFE Classification A:600 1800 , B:1200 3600
MIN.
-
-
600
-
100
-
-
-
TYP.
-
-
-
0.12
250
3.5
0.5
0.3
MAX.
0.1
0.1
3600
0.25
-
-
-
-
UNIT
A
A
V
MHz
pF
dB
dB
1995. 12. 4
Revision No : 0
1/3



KTC3113
KTC3113
1995. 12. 4
Revision No : 2
2/3





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