Power MOSFET. FNK6808D Datasheet

FNK6808D MOSFET. Datasheet pdf. Equivalent

Part FNK6808D
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6808D uses advanced trench technology.
Manufacture FNK
Datasheet
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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6808D Datasheet
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FNK6808D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6808D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
FNK6808D
General Features
VDS = 68V,ID =80A
RDS(ON) < 7.0m@ VGS=10V
(Typ:5.9m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6808D
FNK6808D
TO-263
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
68
±20
80
63
320
130
0.86
Quantity
-
Unit
V
V
A
A
A
W
W/
FNK-Semiconductor
1/7
Sep.2017.Rev.1.0



FNK6808D
Parameter
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Symbol
EAS
TJ,TSTG
FNK6808D
Limit
190
-55 To 175
Unit
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 1.15 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=68V,VGS=0V
VGS=±20V,VDS=0V
68 -
-
V
- - 1 μA
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=10V,ID=20A
23
- 5.9
20 -
4
7.0
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=35V,VGS=0V,
F=1.0MHz
- 4480
- 375
-
-
PF
PF
Crss
- 340
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=30A
VGS=10V,RGEN=6
VDS=30V,ID=20A,
VGS=10V
- 15
- 94
- 46
- 32
- 35
- 11
-9
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=90A
- - 1.2
V
IS
-
- - 90
A
trr
TJ = 25°C, IF =90A
- 78
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 51
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Sep.2017.Rev.1.0





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