FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6808D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK6808D
General Features
● VDS = 68V,ID =80A RDS(ON) < 7.0mΩ @ VGS=10V
(Typ:5.9mΩ)
● Special process technology for high ESD capability ● High...
