Power MOSFET. FNK3400 Datasheet

FNK3400 MOSFET. Datasheet pdf. Equivalent

Part FNK3400
Description N-Channel Power MOSFET
Feature FNK3400 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK3400 uses advanced trench t.
Manufacture FNK
Datasheet
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FNK3400 FNK N-Channel Enhancement Mode Power MOSFET Descri FNK3400 Datasheet
Recommendation Recommendation Datasheet FNK3400 Datasheet





FNK3400
FNK3400
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3400 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
Genera Features
VDS = 30V,ID = 5A
RDS(ON) < 28m@ VGS=10V
RDS(ON) < 32m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface mount package
D
G
S
Schematic diagram
Application
Load switch
PWM application
Marking and pin assignment
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK3400
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
5
20
1.4
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
89 /W
Min Typ Max Unit
30 31
--
-
1
V
μA
FNK-Semiconductor
1/7
Jun.2017.Rev.1.0



FNK3400
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
FNK3400
Condition
VGS=±12V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=5A
VGS=4.5V, ID=4A
VDS=5V,ID=5A
VDS=15V,VGS=0V,
F=1.0MHz
VDD=15V, RL=3
VGS=10V,RGEN=3
VDS=15V,ID=5A,
VGS=10V
VGS=0V,IS=5A
Min Typ Max
- - ±100
Unit
nA
0.6 0.8
- 24
- 27.5
- 15
1.2
28
32
-
V
m
m
S
- 255
- 45
- 35
-
-
-
PF
PF
PF
- 4.5
- 2.5
- 14.5
- 3.5
- 5.2
- 0.85
- 1.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
- - 5.8
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Jun.2017.Rev.1.0





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