ME16P10/ME16P10-G
P- Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME16P10 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
FEATURES
● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V
technology. This high density process is especially tailored to
● Super high density cell desig...
