MEBSS138D/MEBSS138D-G
N-Channel 50V (D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for lo...
