ME25N10F/ME25N10F-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦...
