P-Channel 40-VPowerMOSFET. ME4565 Datasheet

ME4565 40-VPowerMOSFET. Datasheet pdf. Equivalent

Part ME4565
Description N- and P-Channel 40-VPowerMOSFET
Feature N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION The LT4565 is the N- and P-Channel logic enha.
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Datasheet
Download ME4565 Datasheet

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ME4565
N- and P-Channel 40-V Power MOSFET
GENERAL DESCRIPTION
The LT4565 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
ME4565
FEATURES
RDS(ON)40m@VGS=10V (N-Ch)
RDS(ON)45m@VGS=4.5V (N-Ch)
RDS(ON)54m@VGS=-10V (P-Ch)
RDS(ON)60m@VGS=-4.5V(P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain
Current(Tj=150)
TA=25
TA=70
ID
Pulsed Drain Current
IDM
Avalanche Current
Single Pulse Avalanche Energy
L=0.1mH
IAS
EAS
Maximum Power Dissipation
TA=25
TA=70
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Ambient *
RθJA
Thermal Resistance-Junction to Case*
RθJC
*The device mounted on 1in2 FR4 board with 2 oz copper
N-Channel
P-Channel
10 secs Steady State 10 secs Steady State
40 -40
±16 ±16
6.2 4.9 -5.3 -4.2
4.8 3.8 -4.1 -3.2
25 25
13 16
8.5 13
2.5
1.56
2.45
1.52
1.5
0.94
1.47
0.91
-55 to 150
50 80 51 82
49 50
Unit
V
A
mJ
W
℃/W
℃/W
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ME4565
ME4565
N- and P-Channel 40-V Power MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(ON)
On-State Drain Currenta
RDS(ON) Drain-Source On-State Resistancea
GFS Forward Transconductance
VSD Diode Forward Voltage
DYNAMIC
Conditions
VGS=0V, ID=250μA
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
VDS=0V, VGS=±16V
VDS=0V, VGS=±16V
VDS=40V, VGS=0V
VDS=-40V, VGS=0V
VDS=40V, VGS=0V,TJ=55
VDS=-40V, VGS=0V,TJ=55
VDS5V, VGS= 10V
VDS≦-5V, VGS= -10V
VGS=10V, ID= 5.2A
VGS=-10V, ID= -4.5A
VGS=4.5V, ID= 4.9A
VGS=-4.5V, ID= -3.9A
VDS=15V, ID=5.2A
VDS=-15V, ID=-4.5A
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=20V, VGS=4.5V, ID=5.2A
P-Channel
VDS=-20V, VGS=-4.5V, ID=-4.5A
Rg Gate Resistance
VGS=0V, VDS=0V, f=1MHZ
Ciss
Coss
Crss
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
VDS=20V, VGS=0V, F=1MHz
P-Channel
VDS=-20V, VGS=0V, F=1MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
N-Channel
VDD=15V, RL =15Ω
ID=1A, VGEN=10V, RG=6Ω
td(off)
tf
Turn-Off Delay Time
Turn-On Fall Time
P-Channel
VDD=-15V, RL =15Ω
ID=-1A, VGEN=-10V,RG=6Ω
Notes: a. Pulse test; pulse width 300us, duty cycle2%
Min
N-Ch 40
P-Ch -40
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
-0.8
20
-20
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ
0.9
-1.0
32
43
35
48
18
13
0.78
-0.79
8
12
3.3
5
2.8
5.2
0.7
4.5
500
1000
43
81
9.3
22
8
30
15
12
36
62
2
5
Max
1.6
-1.8
±100
±100
1
-1
10
-10
40
54
45
60
1.2
-1.2
Unit
V
V
nA
μA
A
mΩ
S
V
nC
Ω
pF
ns
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