N-Channel MOSFET. ME7642-G Datasheet

ME7642-G MOSFET. Datasheet pdf. Equivalent


Part ME7642-G
Description N-Channel MOSFET
Feature N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION The ME7642-G is the N-Channel logic enhanc.
Manufacture Matsuki
Datasheet
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N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION Th ME7642-G Datasheet
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ME7642-G
N-Channel 40V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
The ME7642-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as notebook computer power
management and other battery powered circuits where Low-side
switching , and low in-line power loss are needed in a very small
outline surface mount package.
PIN CONFIGURATION
PowerDFN 5x6
Top View
ME7642/ME7642-G
FEATURES
RDS(ON)4mΩ@VGS=10V
RDS(ON)5.5mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
NB/MB Vcore Low side switching
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
The Ordering Information: ME7642/ ME7642-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
*The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
40
±20
20.8
16.6
83
2.8
1.8
-55 to 150
45
Unit
V
V
A
A
W
/W
DCC
正式發行
AUG, 2016-Ver1.2
01



ME7642-G
N-Channel 40V(D-S) Enhancement MOSFET
ME7642/ME7642-G
Electrical Characteristics (TJ =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
40
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1
3V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100 nA
IDSS Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
1 μA
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID=25A
VGS=4.5V, ID=19A
3.3 4
mΩ
4.1 5.5
VSD Diode Forward Voltage
IS=25A, VGS=0V
0.8 1.2
V
DYNAMIC
Qg Total Gate Charge
40.5
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V, ID=20A
17.4
nC
Qgd Gate-Drain Charge
17.9
Ciss Input Capacitance
4622
Coss
Output Capacitance
VDS=15V, VGS=0V,F=1MHz
328 pF
Crss Reverse Transfer Capacitance
283
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V, RL =15Ω
ID=1A, VGEN=10V
RG=6Ω
28.9
19.3
ns
111
18.9
Note: a.Pulse test: pulse width300us, duty cycle2
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
AUG, 2016-Ver1.2
DCC
正式發行
02





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