N-Channel MOSFET. ME95N03T Datasheet

ME95N03T MOSFET. Datasheet pdf. Equivalent

Part ME95N03T
Description N-Channel MOSFET
Feature N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DESCRIPTION The ME95N03T is the N-Channel l.
Manufacture Matsuki
Datasheet
Download ME95N03T Datasheet

N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DES ME95N03T Datasheet
N-Channel 30V (D-S) MOSFET ME95N03T/ME95N03T-G GENERAL DES ME95N03T-G Datasheet
Recommendation Recommendation Datasheet ME95N03T Datasheet




ME95N03T
N-Channel 30V (D-S) MOSFET
ME95N03T/ME95N03T-G
GENERAL DESCRIPTION
The ME95N03T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
FEATURES
RDS(ON)6mΩ@VGS=10V
RDS(ON)9mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-220)
Top View
eOrdering Information: ME95N03T (Pb-free)
ME95N03T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current*
TC=25
TC=70
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25
TC=70
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Case**
RθJC
Rating
30
±20
88
74
352
75
53
-55 to 175
2
Unit
V
V
A
A
W
℃/W
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
** The device mounted on 1in2 FR4 board with 2 oz copper.
DCC
正式發行
MSeapr,, 22001102-–VeVre1r.s2ion 1.0
01



ME95N03T
ME95N03T/ME95N03T-G
N-Channel 30V (D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance*
VSD Diode Forward Voltage*
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30, VGS=0V
VGS=10V, ID=50A
VGS=4.5V, ID=35A
ISD=35A, VGS=0V
30
13
±100
1
56
79
0.9 1.2
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
VDD=15V, VGS=10V, ID=35A
59
31
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=15V, VGS=4.5V, ID=35A
10
14
Rg Gate Resistance
Ciss Input Capacitance
VDS=0V, VGS=0V, f=1MHz
1.7
2560
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
388
Crss Reverse Transfer Capacitance
127
td(on)
Turn-On Delay Time
45
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=15V, ID=35A,
VGS =4.5V, RG=6.2Ω
45
68
tf Turn-Off Fall Time
34
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
Ω
pF
ns
MSeapr,, 22001102-–VeVre1r.s2ion 1.0
DCC
正式發行
02





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