P-Channel MOSFET. ME95P03 Datasheet

ME95P03 MOSFET. Datasheet pdf. Equivalent

Part ME95P03
Description P-Channel MOSFET
Feature P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME95P03 is the P-Channel logic enhancement mode.
Manufacture Matsuki
Datasheet
Download ME95P03 Datasheet

P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME95P03 ME95P03 Datasheet
P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME95P03 ME95P03-G Datasheet
Recommendation Recommendation Datasheet ME95P03 Datasheet




ME95P03
P- Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME95P03 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits ,
and low in-line power loss are needed in a very small outline surface
mount package.
PIN CONFIGURATION
(TO-252-3L)
Top View
ME95P03/ME95P03-G
FEATURES
RDS(ON)5.6mΩ@VGS=-20V
RDS(ON)6mΩ@VGS=-10V
RDS(ON)8mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
* The Ordering Information: ME95P03 (Pb-free)
ME95P03-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case*
Symbol
VDS
VGS
ID
IDM
PD
TJ
Tstg
RθJC
Maximum Ratings
-30
±25
-68.2
-54.6
-273
41.7
26.7
150
-55 to 150
3
*The device mounted on 1in2 FR4 board with 2 oz copper.
Unit
V
V
A
A
W
/W
DCC
正式發行
Aug, 2012-Ver1.0
01



ME95P03
P- Channel 30-V (D-S) MOSFET
ME95P03/ME95P03-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-30 V
-1 -3 V
IGSS Gate Leakage Current
VDS=0V, VGS=±25V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
±100
-1
nA
μA
RDS(ON)
VGS=-20V, ID= -20A
Drain-Source On-State Resistancea VGS=-10V, ID= -20A
4.5 5.6
5 6 mΩ
VGS=-4.5V, ID= -16A
68
VSD Diode Forward Voltage
IS=-1A, VGS=0V
-0.7 -1.2
V
DYNAMIC
Qg Total Gate Charge
VDS=-15V, VGS=-10V, ID=-20A
139
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=-15V, VGS=-4.5V, ID=-20A
69.7
nC
27
Qgd Gate-Drain Charge
36.6
Ciss
Input capacitance
6670
Coss
Output Capacitance
VDS=-15V, VGS=0V, F=1MHz
813 pF
Crss
Reverse Transfer Capacitance
716
td(on)
Turn-On Delay Time
66.5
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=-15V, RL =15Ω
VGEN=-10V, RG=3Ω
26.3
224
tf Turn-Off Fall Time
63.5
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b.Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
ns
Aug, 2012-Ver1.0
DCC
正式發行
02





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