N-Channel MOSFET. ME4952-G Datasheet

ME4952-G MOSFET. Datasheet pdf. Equivalent

Part ME4952-G
Description Dual N-Channel MOSFET
Feature Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4952 is the Dual N-Channel logic enhance.
Manufacture Matsuki
Datasheet
Download ME4952-G Datasheet

Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME ME4952-G Datasheet
Recommendation Recommendation Datasheet ME4952-G Datasheet




ME4952-G
Dual N-Channel 100-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4952 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4952/ME4952-G
FEATURES
RDS(ON)270m@VGS=10V
RDS(ON)295m@VGS=6.0V
RDS(ON)350m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME4952 (Pb-free)
ME4952-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction & Storage Temperature Range
Thermal Resistance-Junction to Ambient *
*The device mounted on 1in2 FR4 board with 2 oz copper
VDS
VGS
ID
IDM
PD
TJ
RθJA
100
±20
1.8
1.5
7
2
1.3
-55 to 150
62.5
Unit
V
V
A
A
W
℃/W
DCC
正式發行
Sep, 2012-Ver1.2
01



ME4952-G
Dual N-Channel 100-V (D-S) MOSFET
ME4952/ME4952-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
VBR(DSS) Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1.0
3.0 V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
1 μA
RDS(ON)
Drain-Source On-Resistancea
VGS=10V, ID= 1.3A
VGS=6.0V, ID= 1.3A
220 270
235 295 mΩ
VSD Diode Forward Voltage
VGS=4.5V, ID= 1.0A
IS=1.3A, VGS=0V
270 350
0.8 1.2
V
DYNAMIC
Qg Total Gate Charge
VDS=50V, VGS=10V, ID=1.3A
12
Qg Total Gate Charge
6.5
Qgs Gate-Source Charge
VDS=50V, VGS=4.5V, ID=1.3A
2.7
Qgd Gate-Drain Charge
3.3
Ciss Input capacitance
333
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1.0MHz
38
Crss
Reverse Transfer Capacitance
11
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
1.3
td(on)
Turn-On Delay Time
9
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=50V, RL =50Ω
VGEN=10V, RG=6Ω
7
29
tf Turn-Off Fall Time
4
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
nC
pF
Ω
ns
DCC
正式發行
Sep, 2012-Ver1.2
02





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