N-Channel MOSFET. ME4950-G Datasheet

ME4950-G MOSFET. Datasheet pdf. Equivalent

Part ME4950-G
Description Dual N-Channel MOSFET
Feature Dual N-Channel 100-V (D-S) MOSFET ME4950/ME4950-G GENERAL DESCRIPTION The ME4950 is the Dual N-Cha.
Manufacture Matsuki
Datasheet
Download ME4950-G Datasheet

Dual N-Channel 100-V (D-S) MOSFET ME4950/ME4950-G GENERAL ME4950-G Datasheet
Recommendation Recommendation Datasheet ME4950-G Datasheet




ME4950-G
Dual N-Channel 100-V (D-S) MOSFET
ME4950/ME4950-G
GENERAL DESCRIPTION
The ME4950 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
RDS(ON)115m@VGS=10V
RDS(ON)137m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME4950 (Pb-free)
ME4950-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain
TA=25
TA=70
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TA=25
TA=70
PD
Operating Junction & Storage Temperature Range
Thermal Resistance-Junction to Ambient *
*The device mounted on 1in2 FR4 board with 2 oz copper
TJ
RθJA
Rating
100
±20
3.3
2.6
13
2
1.3
-55 to 150
62.5
Unit
V
V
A
A
W
℃/W
DCC
正式發行
May, 2010-Ver1.1
01



ME4950-G
Dual N-Channel 100-V (D-S) MOSFET
ME4950/ME4950-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
VBR(DSS)
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
100 110
V
1.0 3.0 V
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
1 μA
RDS(ON)
Drain-Source On-Resistancea
VSD Diode Forward Voltage
VGS=10V, ID= 2.5A
VGS=4.5V, ID= 2.0A
IS=2.5A, VGS=0V
95 115
mΩ
105 137
0.8 1.2
V
DYNAMIC
Qg Total Gate Charge
VDS=80V, VGS=10V, ID=2.5A
24
Qg Total Gate Charge
Qgs Gate-Source Charge
14
nC
VDS=80V, VGS=4.5V, ID=2.5A
3.8
Qgd Gate-Drain Charge
7.5
Ciss Input capacitance
905
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1.0MHz 145 pF
Crss
Reverse Transfer Capacitance
43
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
1Ω
td(on)
Turn-On Delay Time
15
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=50V, RL =10Ω
VGEN=10V, RG=6Ω
8
ns
47
tf Turn-Off Fall Time
6
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
May, 2010-Ver1.1
DCC
正式發行
02





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