Power MOSFET. HPU650R1K3DN Datasheet

HPU650R1K3DN MOSFET. Datasheet pdf. Equivalent

Part HPU650R1K3DN
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET HPU650R1K3DN ○R General Description: HPU650R1K3DN, the silicon N-c.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download HPU650R1K3DN Datasheet

Silicon N-Channel Power MOSFET HPU650R1K3DN ○R General Des HPU650R1K3DN Datasheet
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HPU650R1K3DN
Silicon N-Channel Power MOSFET
HPU650R1K3DN
R
General Description
HPU650R1K3DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features
l Superior switching performance
l Low on resistance(Rdson1.3)
l Low gate charge (Typical Data:16.6nC)
l Low reverse transfer capacitances(Typical:16.4pF)
l 100% Single pulse avalanche energy test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
6
100
1.1
Rating
650
6
3.6
24
±20
125
5.0
100
0.8
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 16V0 1



HPU650R1K3DN
HPU650R1K3DN
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=3A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=20V, ID =3A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =6A VDD = 325V
RG =10VGS=10V
ID =6A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.6 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 1.1 1.3
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 6.8 --
-- 1063 --
-- 53.2 --
-- 16.4 --
Units
S
pF
Rating
Min. Typ. Max.
-- 18.3 --
-- 27.2 --
-- 34.4 --
-- 10.5 --
-- 16.6 --
-- 5.0 --
-- 4.6 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 16V0 1





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