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HPD700R1K3SA

HUAJING MICROELECTRONICS
Part Number HPD700R1K3SA
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Mar 22, 2018
Detailed Description Silicon N-Channel Power MOSFET HPD700R1K3SA ○R General Description： HPD700R1K3SA, the silicon N-channel Enhanced MOSFE...
Datasheet PDF File HPD700R1K3SA PDF File

HPD700R1K3SA
HPD700R1K3SA

Overview
Silicon N-Channel Power MOSFET HPD700R1K3SA ○R General Description： HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package type is TO-252, which accords with the RoHS standard.
Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.
95 Ω Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ un...


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