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HPD600R700DN

HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET


Description
Silicon N-Channel Power MOSFET HPD600R700DN ○R General Description: HPD600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati...



HUAJING MICROELECTRONICS

HPD600R700DN

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