Power MOSFET. CS20J65A0-G Datasheet

CS20J65A0-G MOSFET. Datasheet pdf. Equivalent

Part CS20J65A0-G
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CS20J65 A0-G ○R General Description: CS20J65 A0-G, the silicon N-ch.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download CS20J65A0-G Datasheet

Silicon N-Channel Power MOSFET CS20J65 A0-G ○R General Des CS20J65A0-G Datasheet
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CS20J65A0-G
Silicon N-Channel Power MOSFET
CS20J65 A0-G
R
General Description
CS20J65 A0-G, the silicon N-channel Enhanced MOSFETs,
is obtained by the super junction technology which reduces the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package type is TO-263, which accords with the RoHS
standard.
VDSS
ID
PD(TC=25)
RDS(ON)max
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
650 V
20 A
180 W
0.18
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dta3
PD
TJTstg
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating Junction and Storage Temperature Range
Rating
650
20
60
±30
180
5.0
180
55+150
Units
V
A
A
V
mJ
V/ns
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 8 2 016V01



CS20J65A0-G
CS20J65 A0-G
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=10A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=10V, ID =20A
VGS = 0V VDS = 50V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID = 20 A VDD = 300V
RG =25
ID = 20A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.67 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.14 0.18
2.5 4
Units
V
Rating
Min. Typ. Max.
-- 22.1 --
-- 2005 --
-- 115 --
-- 3.3 --
Units
S
pF
Rating
Min. Typ. Max.
-- 38 104
-- 72 220
-- 131 360
-- 50 108
-- 41 --
-- 9.9 --
-- 16 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 8 2 016V01





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