Power MOSFET. CS10J65A4 Datasheet

CS10J65A4 MOSFET. Datasheet pdf. Equivalent

Part CS10J65A4
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CS10J65 A4 ○R General Description: CS10J65 A4, the silicon N-channe.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download CS10J65A4 Datasheet

Silicon N-Channel Power MOSFET CS10J65 A4 ○R General Descr CS10J65A4 Datasheet
Recommendation Recommendation Datasheet CS10J65A4 Datasheet




CS10J65A4
Silicon N-Channel Power MOSFET
CS10J65 A4
R
General Description
CS10J65 A4, the silicon N-channel Enhanced MOSFETs,
is obtained by the super junction technology which reduces the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher
efficiency.The package type is TO-252, which accords with the
RoHS standard.
VDSS
ID
PD(TC=25)
RDS(ON)max
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
l Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
650 V
10 A
62 W
0.62
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dta3
PD
TJTstg
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating Junction and Storage Temperature Range
Rating
650
10
30
±30
50
5.0
62
55+150
Units
V
A
A
V
mJ
V/ns
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 201 7V01



CS10J65A4
CS10J65 A4
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
VGS(TH)
Drain-to-Source On-Resistance
Gate Threshold Voltage
VGS=10V,ID=3A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
Test Conditions
gfs
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID =3A
VGS = 0V VDS = 50V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
Test Conditions
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
ID = 7 A VDD = 300V
RG =25
ID = 7 A VDD =480V
VGS = 10V
R
Rating
Min. Typ. Max.
650 -- --
-- -- 1
-- -- 100
Units
V
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.54 0.62
2.5 4
Units
V
Rating
Min. Typ. Max.
-- 5.6 --
-- 450 --
-- 63 --
-- 3.7 --
Units
S
pF
Rating
Min. Typ. Max.
-- 14 31
-- 32 66
-- 53 109
-- 15 32
-- 10 --
-- 2 --
-- 3.7 --
Units
ns
nC
WUXI CHI NA RESOU RCES HUAJ I NG MI CROELECTR ONI CS CO. , LTD. Pag e 2 of 1 0
2017V01





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