Power MOSFET. CS6J70FA9 Datasheet

CS6J70FA9 MOSFET. Datasheet pdf. Equivalent

Part CS6J70FA9
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CS6J70F A9 ○R General Description: CS6J70F A9, the silicon N-channe.
Manufacture HUAJING MICROELECTRONICS
Datasheet
Download CS6J70FA9 Datasheet

Silicon N-Channel Power MOSFET CS6J70F A9 ○R General Descr CS6J70FA9 Datasheet
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CS6J70FA9
Silicon N-Channel Power MOSFET
CS6J70F A9
R
General Description
CS6J70F A9, the silicon N-channel Enhanced MOSFETs, is
obtained by the super junction technology which reduces the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package type is TO-220F, which accords with the RoHS
standard.
VDSS
ID
PD(TC=25)
RDS(ON)Typ
Features
l Fast Switching
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
700 V
6A
25 W
0.95
Symbol Parameter
VDSS
ID
IDMa1
VGSS
EAS a2
dv/dta3
PD
TJTstg
TL
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation(T=25°C)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Rating
700
6
18
±30
50
5
94
55+150
300
Units
V
A
A
V
mJ
V/ns
W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 16V0 1



CS6J70FA9
CS6J70F A9
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA
VDS = 700V, VGS= 0V,
Ta = 25
VDS =560V, VGS= 0V,
Ta = 125
VGS =+30V VDS= 0V,
VGS =-30V VDS= 0V,
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=2.8A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =6A VDD = 400V
VGS = 10V RG =10
ID = 6 A VDD =560V
VGS = 10V
R
Rating
Min. Typ. Max.
700 -- --
-- 0.67 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.95 1.3
2.0 -- 4.0
Units
V
Rating
Min.
Typ.
Ma Units
x.
-- 416 --
-- 368 -- pF
-- 13.8 --
Rating
Min. Typ. Max.
-- 15 --
-- 20 --
-- 38 --
-- 9 --
-- 16.9 --
-- 3 --
-- 9.2 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 16V0 1





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