N-Channel MOSFET. ME6978ED Datasheet

ME6978ED MOSFET. Datasheet pdf. Equivalent


Part ME6978ED
Description Dual N-Channel MOSFET
Feature .
Manufacture Matsuki
Datasheet
Download ME6978ED Datasheet

ME6978ED Datasheet
ME6978ED-G Datasheet
Recommendation Recommendation Datasheet ME6978ED Datasheet




ME6978ED
ME6978ED/ ME6978ED-G
Dual N-Channel 30-V (D-S) MOSFET , ESD Protection
GENERAL DESCRIPTION
The ME6978ED Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
(TSSOP-8)
Top View
FEATURES
RDS(ON)20m@VGS=10V
RDS(ON)22m@VGS=4.5V
RDS(ON)≦23m@VGS=4V
RDS(ON)32m@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
e Ordering Information: ME6978ED (Pb-free)
ME6978ED-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(tJ=150)
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
e * The device mounted on 1in2 FR4 board with 2 oz copper
Maximum
30
±12
6.4
5.1
26
1.3
0.8
-55 to 150
100
Apr, 2014-Ver1.1
Unit
V
V
A
A
W
℃/W
DCC
正式發行
01



ME6978ED
ME6978ED/ ME6978ED-G
Dual N-Channel 30-V (D-S) MOSFET , ESD Protection
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±10V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
VGS=10V, ID=5A
Min Typ Max
30
0.5 1.5
±10
1
15 20
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss
td(on)
tr
td(off)
tf
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS=4.5V, ID=5A
VGS=4V, ID=3A
VGS=2.5V, ID=3A
IS=5A, VGS=0V
VDS=10V, VGS=10V, ID=7A
VDS=10V, VGS=4.5V, ID=7A
VDS=15V, VGS=0V,f=1MHz
VDD=10V, RL =10Ω
ID=1A, VGEN=4.5V
RG=10Ω
16.5 22
19 23
25 33
0.8 1.2
25
12
4.2
3.8
981
103
33
49
86
335
132
Notes: a. pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
uA
μA
mΩ
V
nC
pF
μs
Apr, 2014-Ver1.1
DCC
正式發行
02





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)