Power MOSFET. FNK10N25S Datasheet

FNK10N25S MOSFET. Datasheet pdf. Equivalent

Part FNK10N25S
Description N-Channel Power MOSFET
Feature FNK10N25S FNK N-Channel Enhancement Mode Power MOSFET Description The FNK10N25S uses advanced tre.
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FNK10N25S
FNK10N25S
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N25S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G
D
D
G
General Features
VDS = 20V,Id = 8A
RDS(ON) <22m@ VGS=2.5V
RDS(ON) < 16m @ VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
SS
Schematic diagram
Application
Battery protection
Load switch
Power management
TSSOP-8 top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK10N25S
FNK10N25S
TSSOP-8L
Reel Size
Ø330mm
Tape width
12 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
8
32
1.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
FNK-Semiconductor
1/7
Feb.2017.Rev.1.0



FNK10N25S
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
FNK10N25S
Symbol
IGSS
Condition
VGS=±10V,VDS=0V
Min Typ Max
- - ±100
Unit
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=2.5V, ID=4.5 A
VGS=4.5V, ID=5A
VDS=15V,ID=5A
0.5 0.65
- 16
- 13
8-
1.2
22
16
-
V
m
m
S
Clss
Coss
VDS=10V,VGS=0V,
F=1.0MHz
- 780
- 140
-
-
PF
PF
Crss
- 80
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-9
VDD=10V,ID=1A
VGS=4.5V,RGEN=6
- 30
- 35
- 10
- 11.4
VDS=10V,ID=5A,VGS=4.5V
-
2.3
- 2.9
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=1A
- - 1.2
V
IS
--
5
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0





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