Power MOSFET. FNK4402 Datasheet

FNK4402 MOSFET. Datasheet pdf. Equivalent

Part FNK4402
Description N-Channel Power MOSFET
Feature FNK4402 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK4402 uses advanced trench t.
Manufacture FNK
Datasheet
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FNK4402 FNK N-Channel Enhancement Mode Power MOSFET Descri FNK4402 Datasheet
Recommendation Recommendation Datasheet FNK4402 Datasheet




FNK4402
FNK4402
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK4402 uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
switch or power management.
General Features
V DS = 20V,I D = 25A
R DS(ON) <5.0m@ VGS=4.5V
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
Power management
Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4402
FNK4402
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
25
70
3.5
-55 To 150
36
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250 μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,V GS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
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FNK4402
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
FNK4402
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250 μA
VGS=-10V, ID=-15A
VDS=-10V,ID=-15A
0.6 0.75 1.0
- 3.8 5.0
30 -
-
V
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 3960
- 486
-
-
PF
PF
Crss
- 268
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-10A,
VGS=-10V,RGEN=3
VDS=-15V,ID=-10A,VGS=-10V
-
-
-
-
-
-
-
20
13
55
21
65
12
14
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-2A
- - -1.2 V
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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