FNK10N02
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK10N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V
(Typ2.07mΩ)
● High density cell design for ultra low Rdson ● Fully cha...
