Power MOSFET. FNK08N03C Datasheet

FNK08N03C MOSFET. Datasheet pdf. Equivalent

Part FNK08N03C
Description N-Channel Power MOSFET
Feature FNK N-Channel Enhancement Mode Power MOSFET FNK08N03C Description TheFNK08N03C uses advanced trenc.
Manufacture FNK
Datasheet
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FNK N-Channel Enhancement Mode Power MOSFET FNK08N03C Desc FNK08N03C Datasheet
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FNK08N03C
FNK N-Channel Enhancement Mode Power MOSFET
FNK08N03C
Description
TheFNK08N03C uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =80A
RDS(ON) <5.9m@ VGS=10V
(Typ:5m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Schematic diagram
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK08N03C
FNK08N03C
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
80
57
320
110
108
-55 To 175
Unit
V
V
A
A
A
W
mJ
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0



FNK08N03C
FNK08N03C
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=10V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V,ID=30A
VGS=4.5V,RGEN=1.8
VDS=15V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=30A
IS -
trr TJ = 25°C, IF = 30A
Qrr di/dt = 100A/μs(Note3)
1.36 /W
Min Typ Max Unit
30 -
-
V
- - 1 μA
- - ±100 nA
0.7 1.2
- 5.0
50 -
1.7
5.9
-
V
m
S
2155
275
220
PF
PF
PF
- 11
- 160
- 25
- 60
70
8.8
16.3
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
- - 100
- 56
-
- 110
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0





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