FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK3205/55H12
General Features
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V
(Typ:4.1mΩ)
● High density cell design for ultra low Rdson ● Fully ...
