Power MOSFET. FNK60H10 Datasheet

FNK60H10 MOSFET. Datasheet pdf. Equivalent


Part FNK60H10
Description N-Channel Power MOSFET
Feature FNK60H10 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK60H10 uses advanced trench .
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FNK60H10
FNK60H10
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK60H10 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Feature
VDS =60V,ID =100A
RDS(ON) < 6.5m@ VGS=10V
(Typ:5.7m)
Schematic diagram
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
60H10
FNK60H10
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
IDM
Limit
60
±20
100
70
320
Quantity
-
Unit
V
V
A
A
A
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FNK60H10
FNK60H10
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
PD
EAS
TJ,TSTG
170
1.13
550
-55 To 175
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.88 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60 65
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=60V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
23
- 5.7
4
6.5
V
m
Forward Transconductance
gFS
VDS=10V,ID=40A
- 50
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 4800
- 440
-
-
PF
PF
Crss
- 260
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 16.8
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=1A
VGS=10V,RGEN=2.5
- 10.8
- 55
-
-
nS
nS
Turn-Off Fall Time
tf
- 13.6
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 85
- 18
- 28
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=20A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
-
- - 90
A
trr
TJ = 25°C, IF = 40A
- 38
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 53
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
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