Power MOSFET. FNK4805 Datasheet

FNK4805 MOSFET. Datasheet pdf. Equivalent

Part FNK4805
Description Dual P-Channel Power MOSFET
Feature 30V Dual P-Channel MOSFET General Description The FNK4805 combines advanced trench MOSFET technolo.
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30V Dual P-Channel MOSFET General Description The FNK4805 FNK4805 Datasheet
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FNK4805
30V Dual P-Channel MOSFET
General Description
The FNK4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
Product Summary
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at V =-4.5V)
-30V
-7.5A
< 23m
< 35m
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
FNK4805
D1 D2
G1 G2
S1 S2
Top View
SOP-8
Bottom View
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±20
-7.5
-5
-50
33
54
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
FNK-Semiconductor
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Feb.2017.Rev.1.0



FNK4805
FNK4805
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
TJ=55°C
-1
µA
-5
VDS=0V, VGS=±25V
±100 nA
VDS=VGS ID=-250µA
-1.0 -1.5 -3.0 V
VGS=-10V, VDS=-5V
-50
A
VGS=-10V, ID=-7A
17 23 m
VGS=-4.5V,ID=-8A
27 35
m
VGS=-4.5V, ID=-5A
29 m
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=-5V, ID=-7A
IS=-1A,VGS=0V
27
-0.7 -1
S
V
IS Maximum Body-Diode Continuous Current
-2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2060 2600 pF
370 pF
295 pF
1.2 2.4 3.6
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-7A
30 39 nC
4.6 nC
Qgd Gate Drain Charge
10 nC
tD(on)
Turn-On DelayTime
11 ns
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=1.67,
9.4
ns
tD(off)
Turn-Off DelayTime
RGEN=3
24 ns
tf Turn-Off Fall Time
12 ns
trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/µs
30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
22 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0





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