Power MOSFET. FNK4435 Datasheet

FNK4435 MOSFET. Datasheet pdf. Equivalent


Part FNK4435
Description P-Channel Power MOSFET
Feature FNK4435 FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4435 use s advanced trench .
Manufacture FNK
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FNK4435 FNK P-Channel Enhancement Mode Power MOSFET Descri FNK4435 Datasheet
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FNK4435
FNK4435
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK4435 use s advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
General Features
VDS = -30V,ID = -9.1A
RDS(ON) < 35m@ VGS=-4.5V
RDS(ON) < 20m@ VGS=-10V
D
G
S
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
Battery Switch
Load switch
Power management
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4435
FNK4435
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current (TJ =150)
TC =70
TA =25
ID
Drain Current-Pulsed (Note 1)
TA =70
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Limit
-30
±20
-11
-9
-9.1
-7.2
-36
3.1
-55 To 150
40
Unit
V
V
A
A
W
/W
FNK-Semiconductor
1/7
Feb.2017.Rev.1.0



FNK4435
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Condition
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=-15V,ID=-9.1A
VDS=-15V,VGS=0V,
F=1.0MHz
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
VDS=-15V,ID=-9.1A
VGS=-10V
VGS=0V,IS=-2.1A
FNK4435
Min Typ Max Unit
-30 -33
-
--
-1
- - ±100
V
μA
nA
-1 -1.5
- 13
- 24
10 -
-3
20
35
-
V
m
m
S
- 1600
- 350
- 300
-
-
-
PF
PF
PF
- 10
- 15
- 110
70
- 30
- 5.5
-8
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0





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