Power MOSFET. FNK4407A Datasheet

FNK4407A MOSFET. Datasheet pdf. Equivalent

Part FNK4407A
Description P-Channel Power MOSFET
Feature FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4407A uses advanced trench technology.
Manufacture FNK
Datasheet
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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4407A Datasheet
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FNK4407A
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK4407A uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
switch or in PWM applications.
FNK4407A
General Features
VDS = -30V,ID = -15A
R DS(ON) <16 m@ VGS=-10V
R DS(ON) <25m@ VGS =-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Uninterruptible power supply
Schematic diagram
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK4407
FNK4407
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-15
-60
3.1
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 -33
-
V
FNK-Semiconductor
1/7
Feb.2017.Rev.1.0



FNK4407A
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
FNK4407A
IDSS
VDS=-30V,VGS=0V
- - -1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-8A
VDS=-5V,ID=-15A
-1.0 -1.75
- 11.3
- 17.5
30 -
-2.2
16
25
-
V
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 2900
- 410
-
-
PF
PF
Crss
- 280
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-10A,
VGS=-10V,RGEN=3
VDS=-15V,ID=-10A,VGS=-10V
-
-
-
-
-
-
-
15
11
44
21
48
12
14
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-2A
- - -1.2 V
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
FNK-Semiconductor
2/7
Feb.2017.Rev.1.0





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