Power MOSFET. FNK3075PD Datasheet

FNK3075PD MOSFET. Datasheet pdf. Equivalent

Part FNK3075PD
Description P-Channel Power MOSFET
Feature FNK P-Channel Enhancement Mode Power MOSFET Description The FNK3075PC/D uses advanced trench technol.
Manufacture FNK
Datasheet
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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK3075PD Datasheet
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FNK3075PD
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK3075PC/D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-30V,I =-75A
R DS(ON) < 6.9m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Battery and loading switching
TO-251 top view
FNK3075PC/D
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK3075PC
FNK3075PC
TO-251
FNK3075PD
FNK3075PD
TO-252
Reel Size
-
-
Tape width
-
-
Quantity
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-75
-300
35
0. 28
368
-55 To 150
Unit
V
V
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6 /W
FNK-Semiconductor
1/8
Nov.2016.Rev.1.0



FNK3075PD
FNK3075PC/D
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-10A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=-10V,ID=-15A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V,ID=-10A
VGS=-10V,RGEN=6
VDS=-15V,ID=-10A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=-10A
IS
trr TJ = 25°C, IF = -10A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
-30 -33
-
--
1
- - ±100
-1 -1.6 -2.5
-5
6.9
- 20
-
- 6105
- 785
- 600
-
-
-
- 13
- 12
- 50
- 14
- 84
- 11.7
- 25
-
-
-
-
-
-
-
- -0.85 -1.2
- - -50
--
45
--
43
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-15V,VG=-10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/8
Nov.2016.Rev.1.0





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