FNK3607
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK3607 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =80V,ID =110A RDS(ON) < 9.0mΩ @ VGS=10V
(Typ:7.1mΩ)
● High density cell design for ultra low Rdson ● Fully charac...
