VDS
1000 V
C3M0065100J
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
TAB
Low parasitic inductance with separate driver source pin
Drain
7mm of creepage distance between drain and source
High blocking voltage with low O...
