Power MOSFET. C3M0065100J Datasheet

C3M0065100J MOSFET. Datasheet pdf. Equivalent


Part C3M0065100J
Description Silicon Carbide Power MOSFET
Feature VDS 1000 V C3M0065100J ID @ 25˚C 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technolo.
Manufacture CREE
Datasheet
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C3M0065100J
VDS 1000 V
C3M0065100J
ID @ 25˚C
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 65 m
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
Low parasitic inductance with separate driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
Fast intrinsic diode with low reverse recovery (Qrr)
Low output capacitance (60pF)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Increase power density
Increase system switching frequency
Applications
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
TAB
Drain
1234567
G KS S S S S S
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
Marking
C3M0065100J
TO-263-7
C3M0065100J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
1000
-8/+19
-4/+15
35
22.5
ID(pulse) Pulsed Drain Current
90
EAS Avalanche energy, Single pulse
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113.5
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note. 1
Note. 2
Fig. 19
Fig. 22
Fig. 20
1 C3M0065100J Rev. -, 04-2017



C3M0065100J
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
Min.
1000
1.8
Typ.
2.1
1.6
1
10
65
90
14.3
11.9
Ciss Input Capacitance
660
Coss Output Capacitance
60
Crss Reverse Transfer Capacitance
4.0
Eoss Coss Stored Energy
16
EON Turn-On Switching Energy (Body Diode FWD)
157
EOFF Turn Off Switching Energy (Body Diode FWD)
td(on) Turn-On Delay Time
35
13
tr Rise Time
9
td(off)
Turn-Off Delay Time
13
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
7.5
4.7
9
16
35
Max.
3.5
100
250
78
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA, TJ = 150ºC
VDS = 1000 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 20 A
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 700 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 2.5Ω, L= 130 μH, TJ = 150ºC
VDD = 700 V, VGS = -4 V/15 V
ns
ID = 20 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 700 V, VGS = -4 V/15 V
nC ID = 20 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
VSD Diode Forward Voltage
IS Continuous Diode Forward Current
IS, pulse
Diode pulse Current
trr Reverse Recovery time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Thermal Characteristics
Typ.
4.8
4.4
14
310
34
Max.
22
90
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 10 A
VGS = -4 V, ISD = 10 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 20 A, VR = 700 V
dif/dt = 4500 A/µs, TJ = 150 °C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.1
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
30
Note. 3
Fig. 27
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note 1
Note
Fig. 21
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2 C3M0065100J Rev. -, 04-2017







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