Power MOSFET. C3M0120100J Datasheet

C3M0120100J MOSFET. Datasheet pdf. Equivalent


Part C3M0120100J
Description Silicon Carbide Power MOSFET
Feature VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technolo.
Manufacture CREE
Datasheet
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C3M0120100J
VDS 1000 V
C3M0120100J
ID @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on) 120 m
N-Channel Enhancement Mode
Features
Package
C3MTM SiC MOSFET technology
Low parasitic inductance with separate driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
Fast intrinsic diode with low reverse recovery (Qrr)
Low output capacitance (60pF)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
TAB
Drain
1234567
G KS S S S S S
Applications
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Part Number
C3M0120100J
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Package
TO-263-7
Marking
C3M0120100J
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID Continuous Drain Current
1000
-8/+19
-4/+15
22
13.5
ID(pulse) Pulsed Drain Current
50
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C
A
VGS = 15 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
1 C3M0120100J Rev. -, 04-2017
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20



C3M0120100J
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
V(BR)DSS Drain-Source Breakdown Voltage
1000
VGS(th)
Gate Threshold Voltage
1.8 2.1
1.6
IDSS Zero Gate Voltage Drain Current
1
IGSS Gate-Source Leakage Current
10
RDS(on) Drain-Source On-State Resistance
120
170
gfs Transconductance
7.7
6.7
Ciss Input Capacitance
350
Coss Output Capacitance
40
Crss Reverse Transfer Capacitance
3
Eoss Coss Stored Energy
9
EON Turn-On Switching Energy (Body Diode FWD)
140
EOFF Turn Off Switching Energy (Body Diode FWD)
td(on) Turn-On Delay Time
25
7
tr Rise Time
8
td(off)
Turn-Off Delay Time
14
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
8
16
4.8
10.0
21.5
Max.
3.5
100
250
155
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 3 mA
VDS = VGS, ID = 3 mA, TJ = 150ºC
VDS = 1000 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 15 A
VGS = 15 V, ID = 15 A, TJ = 150ºC
VDS= 20 V, IDS= 15 A
VDS= 20 V, IDS= 15 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 700 V, VGS = -4 V/15 V, ID = 15A,
RG(ext) = 2.5Ω, L= 156 μH, TJ = 150ºC
VDD = 700 V, VGS = -4 V/15 V
ns
ID = 15 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 700 V, VGS = -4 V/15 V
nC ID = 15 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
VSD Diode Forward Voltage
IS
IS, pulse
trr
Qrr
Irrm
Continuous Diode Forward Current
Diode pulse Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.8
4.4
16
154
15
Max.
16.5
50
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 7.5 A
VGS = -4 V, ISD = 7.5 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 15 A, VR = 700 V
dif/dt = 2400 A/µs, TJ = 150 °C
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26
Fig. 27,
28
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note 1
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.5
40
Unit
°C/W
Test Conditions
Note
Fig. 21
2 C3M0120100J Rev. -, 04-2017







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