Schottky Diode. C3D08065E Datasheet

C3D08065E Diode. Datasheet pdf. Equivalent

Part C3D08065E
Description Silicon Carbide Schottky Diode
Feature C3D08065E Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier .
Manufacture CREE
Datasheet
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C3D08065E Silicon Carbide Schottky Diode Z-Rec® Rectifier F C3D08065E Datasheet
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C3D08065E
C3D08065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
VRRM =
IF (TC=135˚C) =
Qc =
650 V
12 A
20 nC
TO-252-2
PIN 1
PIN 2
Part Number
C3D08065E
CASE
Package
TO-252-2
Marking
C3D08065
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650 V
VRSM
Surge Peak Reverse Voltage
650 V
VDC
IF
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
DC Blocking Voltage
650
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
25.5
12
8
34
25
71
60
650
530
120
52
-55 to
+175
V
TC=25˚C
A TC=135˚C
TC=155˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
1 C3D08065E Rev. A, 12-2015
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4



C3D08065E
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5 1.8
2.1 2.4
10 50
20 200
20
395
37
32
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 650 V, IF = 8A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
3.0
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.25
Unit
°C/W
Note
Fig. 9
Typical Performance
20
18 TJ = -55 °C
16 TJ = 25 °C
14 TJ = 75 °C
12 TJ = 125 °C
10 TJ = 175 °C
8
6
4
2
0
0 02.000 0 . 5400 1 . 0 6010. 5 820.00 21.5000 3 . 0 12003 .5 4.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics
2 C3D08065E Rev. A, 12-2015





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