Schottky Diode. C3D16065D Datasheet

C3D16065D Diode. Datasheet pdf. Equivalent

C3D16065D Datasheet
Recommendation C3D16065D Datasheet
Part C3D16065D
Description Silicon Carbide Schottky Diode
Feature C3D16065D; C3D16065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = IF (TC=135˚.
Manufacture CREE
Datasheet
Download C3D16065D Datasheet




CREE C3D16065D
C3D16065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM =
IF (TC=135˚C) =
Qc =
650 V
22 A**
40 nC**
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D16065D
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Package
TO-247-3
Test Conditions
Marking
C3D16065
Note
VRRM
Repetitive Peak Reverse Voltage
650 V
VRSM
Surge Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
IF
IFRM
IFSM
IFSM
Ptot
dV/dt
Continuous Forward Current (Per Leg/Device)
Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Power Dissipation (Per Leg)
Diode dV/dt ruggedness
∫i2dt
i2t value (Per Leg)
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
650
23/46
11/22
8/16
37.5/75
25.5/51
71/142
60/120
650/1300
530/1080
100*
43.5*
200
25
18
-55 to
+175
1
8.8
V
TC=25˚C
A TC=135˚C
TC=150˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
V/ns VR=0-600V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D16065D Rev. B, 7-2016



CREE C3D16065D
Electrical Characteristics (Per Leg)
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.5
2.1
10
12
Max.
1.8
2.4
51
204
Unit
V
μA
QC Total Capacitive Charge
20
C Total Capacitance
395
37
32
EC Capacitance Stored Energy
3.0
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1.5 *
0.75 **
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance (Per Leg)
20
18 TJ = -55 °C
16 TJ = 25 °C
14 TJ = 75 °C
12 TJ = 125 °C
10 TJ = 175 °C
8
6
4
2
0
0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics
2 C3D16065D Rev. B, 7-2016



CREE C3D16065D
Typical Performance (Per Leg)
80
70
60
50
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
40
30
20
10
0
25 50 75 100 125 150 175
TC ˚C
Figure 3. Current Derating
30
Conditions:
TJ = 25 °C
25
20
15
10
5
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVge), VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC ˚C
450
400
350
300
250
200
150
100
50
0
0
Figure 4. Power Derating
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1 10 100
ReverseVVRol(taVg)e, VR (V)
1000
Figure 6. Capacitance vs. Reverse Voltage
3 C3D16065D Rev. B, 7-2016







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