Schottky Diode. CPW2-0650-S006B Datasheet

CPW2-0650-S006B Diode. Datasheet pdf. Equivalent

Part CPW2-0650-S006B
Description Silicon Carbide Schottky Diode
Feature CPW2-0650-S006B Silicon Carbide Schottky Diode Chip Z-Rec® Rectifier Features • 650-Volt Schottky R.
Manufacture CREE
Datasheet
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CPW2-0650-S006B Silicon Carbide Schottky Diode Chip Z-Rec® R CPW2-0650-S006B Datasheet
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CPW2-0650-S006B
CPW2-0650-S006B
Silicon Carbide Schottky Diode Chip
Z-Rec® Rectifier
Features
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Chip Outline
VRRM
= 650 V
IF(AVG)
= 6A
Qc = 15 nC
Part Number
CPW2-0650-S006B
Die Size
1.55 x 1.55
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM Repetitive Peak Reverse Voltage
650 V
VRSM Surge Peak Reverse Voltage
650 V
VR DC Peak Blocking Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Diode dV/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
650 V
19
9
6
30
20
63
49
540
460
200
20
12
-55 to
+175
TC=25˚C
A TC=135˚C
TC=154˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
V/ns VR=0-650V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
TProc Maximum Processing Temperature
1. Assumes RθJC Thermal Resistance of 1.7˚C/W or less
325 ˚C 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
1
1
1
1
1



CPW2-0650-S006B
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
EC Capacitance Stored Energy
Typ.
1.5
2.0
8
15.5
Max.
1.7
2.4
40
160
15
295
28.5
25.5
2.3
Unit
V
μA
nC
pF
μJ
Test Conditions
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 6 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Note
Fig. 1
Fig. 2
Fig. 3
Fig. 4
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
1.55 x 1.55
1.29 x 1.29
1.08 x 1.08
377 ± 10%
100
4
1.8
Polyimide
Unit
mm
mm
mm
μm
mm
μm
μm
2 CPW2-0650-S006B Rev. A, 02-2017





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