2SB1317. B1317 Datasheet

B1317 2SB1317. Datasheet pdf. Equivalent


Part B1317
Description 2SB1317
Feature Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Com.
Manufacture Panasonic
Datasheet
Download B1317 Datasheet


Power Transistors 2SB1317 Silicon PNP triple diffusion plana B1317 Datasheet
Recommendation Recommendation Datasheet B1317 Datasheet




B1317
Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1975
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–180
–180
–5
–25
–15
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = –180V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –8A
VCE = –5V, IC = –8A
IC = –10A, IB = –1A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
–50 µA
–50 µA
20
60 200
20
–1.8 V
–2.5 V
20 MHz
450 pF
1



B1317
Power Transistors
PC — Ta
200
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
150 (PC=3.5W)
(1)
100
50
(2) (3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–24
TC=25˚C
–20 IB=–1000mA
–800mA
–700mA
–600mA
–16 –500mA
–400mA
–300mA
–12
–200mA
–8 –150mA
–100mA
–50mA
–4
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1317
IC — VBE
–24
VCE=–5V
–18
25˚C
TC=–25˚C 100˚C
–12
–6
0
0 –1 –2 –3 –4
Base to emitter voltage VBE (V)
VCE(sat) — IC
–10
IC/IB=10
–3 25˚C
TC=100˚C –25˚C
–1
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
1000
hFE — IC
VCE=–5V
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
1000
300
100
fT — IC
VCE=–10V
f=1MHz
TC=25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
–100
–30 ICP
–10 IC
–3
100ms
–1
Non repetitive pulse
TC=25˚C
t=10ms
DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2







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